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| Datasheet File OCR Text: |
| NTE596 Silicon Diode, Dual, Common Anode, High Speed Description: The NTE596 consists of two silicon diodes in an SOT-23 type surface mount package. The anodes are common and the device is intended for high-speed switching applications in thick and thin-film circuits. Absolute Maximum Ratings: Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Non-Repetitive Peak Forward Current (Per device, t = 1s), IFSM . . . . . . . . . . . . . . . . . . . . . . . 500mA Average Rectified Forward Current (Average over any 20ms period, Note 1), IF(Av) . . . . . . 250mA DC Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Repetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Total Power Dissipation (TA +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +175C Thermal Resistance, Junction-to-Tab, RthJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W Thermal Resistance, Tab-to-Soldering Points, RthTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 x 280K/W Thermal Resistance, Soldering Points-to-Ambient (Note 2), RthSA . . . . . . . . . . . . . . . . . 2 x 90K/W Note 1. Measured under pulse conditions: tp 0.5ms, IF(AV) = 150mA, t(av) 1ms, for sinusoidal operation. Note 2. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm). Electrical Characteristics (Per Diode): (TJ = +25C unless otherwise specified) Parameter Forward Voltage Symbol VF Test Conditions IF = 1mA IF = 10mA IF = 50mA IF = 150mA Reverse Current Diode Capacitance Forward Recovery Voltage (When switched to IF = 10mA) IR Cd Vfr VR = 70V VR = 70V, TJ = +150C VR = 0, f = 1MHz tr = 20ns Min - - - - - - - - Typ - - - - - - - - Max 715 855 1000 1250 2.5 50 2 1.75 Unit mV mV mV mV A A pF V Electrical Characteristics (Per Diode): (TJ = +25C unless otherwise specified) Parameter Reverse Recovery Time (When switched from IF = 10mA to IR = 10mA Recovery Charge (When switched from IF = 10mA to VR = 5V Symbol trr Test Conditions measured at IR = 1mA, RL = 100 RL = 100 Min - Typ - Max 6 Unit ns Qs - - 45 pC .016 (0.48) A K K .098 (2.5) Max .037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3) .043 (1.1) .007 (0.2) |
Price & Availability of NTE596
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